bipolarics, inc. part number B30V140 g pe = 14.0 db @ 1.0 ghz p 1db power output at 1 db compression: f = 1.0 ghz dbm 27.0 g 1db gain at 1db compression: f = 1.0 ghz db 9.0 collector efficiency class a % 30 c cb collector base capacitance: f = 1 mhz, i e = 0 pf 1.3 2.0 h fe forward current transfer ratio: v ce = 8v, i c =50 ma 20 60 100 p t total power dissipation w 1.5 v cbo collector-base voltage 60 v symbol parameters rating units symbol parameters & conditions unit min. typ. max. v ce =15v, i c = 100 ma, class a, unless stated product data sheet silicon microwave power transistor v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 3.0 v i c collector current (instantaneous) 160 ma t j junction temperature 200 o c t stg storage temperature -65 to +150 o c absolute maximum ratings: features: high output power 27.0 dbm, p 1db @ 1.0 ghz high gain bandwidth product f t = 6.0 ghz @ i c = 100 ma high gain performance d ata: electrical characteristics (t a = 25 o c) ceramic, beo & stripline packages available description and applications: bipolarics' B30V140 is a high performance, low cost silicon bipolar transistor intended for linear power applications at frequencies of 0.5 to 2.6 ghz. uniformity and reliability are assured by the use of advanced process techniques: ion implanted junctions, ion implanted ballast resistors and gold metallization. when the B30V140 is bonded common emitter, linear output power of 1 watt can be achieved. by driving part type b30v180 or b30v1160 combination thereof, higher output power can be achieved.
bipolarics, inc. medium power silicon microwave transistor notes: (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice ( mm ) 5.0 min (all leads) 45 0.5+0.07 1.3 +0.4 -0.3 0.1 +0.06 -0.03 +0.4 -0.2 2.5 1.0+0.1 package style 70 : 0.0 70 " stripline package style 3 5: micro-x 0 .0 85 " ceramic package style 23: 0. 230 " beo flange part number b 3 0v140 page 2 lead 1 2 3 4 package base emitter collector emitter 70 , 3 5 & 23
part number B30V140 medium power silicon microwave transistor page 3 bipolarics, inc. package style 22 : sot-223 package style 14 : sot-143 package style 02 : sot-23 package style 02 j: sot-23j 0.30 0.51 1.39 1.57 2.25 2.75 0.45 0.60 0.95 2.65 3.04 0.00 0.10 0.45 0.60 0.10 0.79 1.1 1.90
bipolarics, inc. part number B30V140 midium power silicon microwave transistor page 4 .020 .51 5 .065 2.15 .008+.002 .20+.050 1 2 3 4 .215+.010 5.46+.25 .020 .51 .60+0.10 1.52+.26 0.02 .51 0.008+0.002 0.203+0.051 0.032+0.015 2.34+0.38 .020+.010 0.51+.25 0.106+0.015 2.67+0.38 0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 0.060+0.01 1.52+0.25 1 2 3 4 package style 4sl: 85 mil plastic,micro-x short lead package style 4sm: 85 mil plastic,micro-x surface mount package style 4: 85 mil plastic, micro-x package style 10: 145 mil plastic macro-x
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